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介绍了绝缘栅双极型晶体管(IGBT)功率模块键合引线脱落和焊料层疲劳两种主要的失效形式,分析了各自的失效机理。从IGBT功率模块失效发生部位的角度出发,即按照基于封装失效的状态监测技术和基于芯片失效的状态监测技术的分类方法,综述了国内外IGBT状态监测技术,总结了两种主要失效形式的外部特征参量的变化,认为IGBT状态监测技术是进行故障预测及诊断、提高IGBT功率模块可靠性、减少经济损失的重要方法。对各种监测方法的优缺点及可行性进行了分析,探讨了其进一步的发展方向,对如何准确获取状态参量、如何提高状态监测技术的准确性等关键问题进行了展望。
The two main failure modes of bond wire dropping and solder layer fatigue in power module of insulated gate bipolar transistor (IGBT) are introduced. Their failure mechanisms are analyzed. From the point of failure of IGBT power module, this paper summarizes the IGBT status monitoring technology at home and abroad according to the state monitoring technology based on package failure and the state monitoring technology based on chip failure, and summarizes the externalities of the two main failure modes It is considered that IGBT status monitoring technology is an important method for fault prediction and diagnosis, improving the reliability of IGBT power module and reducing economic losses. The advantages and disadvantages of various monitoring methods and their feasibility are analyzed. The further development direction of the monitoring methods is discussed. The key problems such as how to obtain the state parameters accurately and how to improve the accuracy of the condition monitoring technology are also discussed.