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以新型的空穴传输材料三苯基二胺衍生物聚合(PTPD)制成了氧化铟锡(ITO)/PTPD/(Alq3)(8-羟基喹啉铝)/Mg:Ag异质结发光器件,考察了器件发光性能随Alq3电子传输层(ETL)厚度变化的规律,研究了聚合物/小分子异质结发光器件的电场对载流子复合区域的影响。基于能带理论和隧穿理论认为,这是由于器件上电场的重新分布和电场作用下载流子输运及隧穿势垒作用的综合结果。
Indium tin oxide (ITO) / PTPD / (Alq3) (8-hydroxyquinoline aluminum) / Mg: Ag heterojunction light-emitting devices were prepared by the novel hole transport material triphenyldiamine derivative polymerization (PTPD) The influence of the electric field of the polymer / small molecule heterojunction light emitting device on the carrier recombination region was investigated by observing the regularity that the device’s luminescent properties changed with the thickness of the Alq3 electron transport layer (ETL). Based on the band theory and tunneling theory, it is considered that this is due to the recombination of the electric field on the device and the combined effect of carrier transport and tunneling barrier under the electric field.