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本文提出了一种可以直接在GaASMESFET上测定有源层迁移率分布的方法。这种测定迁移率分布的方法是基于半导体的磁阻效应。推导了测定迁移率的计算公式。给出了典型器件有源层迁移率分布的实验结果。并与Sites法的测量结果进行了比较。
This paper presents a method that can directly measure the mobility distribution of the active layer on the GaAsMESFET. This method of determining the mobility distribution is based on the magnetoresistive effect of the semiconductor. The calculation formula for determining the mobility is deduced. The experimental results of the mobility distribution of the active layer of a typical device are given. And compared with the Sites method.