论文部分内容阅读
自热效应SHE(self-heating effect)是SOI MOSFETs可靠性研究的关键问题之一.在热载流子注入HCI(hot carrier injection)应力下会导致自热效应加剧,低估器件工作寿命,使得寿命预测不准.本文提出了一种基于直流HCI应力下的0.18μmPD-SOINMOSFETs可靠性寿命预测方法.通过栅电阻法提取沟道中因自热效应产生的温度,采用自热修正后的衬底电流/漏电流比率模型预测PD-SOI NMOSFETs在正常工作电压下的寿命值,预测结果与未消除自热影响预测出的寿命值存在较大差异,说明自热修正在寿命预测中不可忽略,否则会低估器件的工作寿命.
The self-heating effect (SHE) is one of the key issues in the reliability research of SOI MOSFETs.It can lead to self-heating effect under the stress of hot carrier injection (HCI), underestimating the working life of the device, In this paper, a method for predicting the reliability life of 0.18μm PD-SOINMOSFETs based on DC HCI stress is proposed.The temperature of the channel due to self-heating effect is extracted by gate resistance method, and the substrate current / leakage current ratio after self-heating correction The model predicts the lifetimes of PD-SOI NMOSFETs under normal operating voltage. The predicted results are quite different from those predicted by self-heating effects, indicating that the self-heating correction can not be neglected in the life prediction. Otherwise, the operation of the device will be underestimated life.