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把许多光电探测器元件(金属-绝缘体-半导体光电二极管或光导器件)制成阵列形的能力取决于在适当的衬底上制得具有优良电子性能和均匀性的这类材料薄层的能力。而这种均匀性要求用传统方法如液相外延法(LPE)是难以满足的。有机金属化学汽相淀积法(OMCVD)是为此原因提出的另一种可供选择的方法。用OMCVD法生长Hg_(1-x)Cd_xTe最初是由Irvine等作者报导的,采用的是Cd和Te物
The ability to shape many photodetector elements (metal-insulator-semiconductor photodiodes or photoconductors) into an array depends on the ability to make a thin layer of such material with good electronic properties and uniformity on a suitable substrate. This uniformity requires conventional methods such as liquid phase epitaxy (LPE) is difficult to meet. Organometallic chemical vapor deposition (OMCVD) is an alternative method for this reason. The growth of Hg_ (1-x) Cd_xTe by OMCVD was first reported by Irvine et al., Using Cd and Te