论文部分内容阅读
It has been reported that the gate leakage currents are described by the Frenkel-Poole emission(FPE) model,at temperatures higher than 250 K.However,the gate leakage currents of our passivated devices do not accord with the FPE model.Therefore,a modified FPE model is developed in which an additional leakage current,besides the gate(Ⅰ_Ⅱ),is added.Based on the samples with different passivations,the Ⅰ_Ⅱ caused by a large number of surface traps is separated from total gate currents,and is found to be linear with respect to(φ_B-V_g)~(0.5).Compared with these from the FPE model,the calculated results from the modified model agree well with the I_g-V_g measurements at temperatures ranging from 295 K to 475 K.
It has been reported that the gate leakage currents are described by the Frenkel-Poole emission (FPE) model, at temperatures higher than 250 K. However, the gate leakage currents of our passivated devices do not accord with the FPE model. Beforefore, a modified FPE model is developed in which an additional leakage current, besides the gate (I_II), is added.Based on the samples with different passivations, the I_II caused by a large number of surface traps is separated from total gate currents, and is found to be linear with respect to (φ_B-V_g) ~ (0.5) .Compared with these from the FPE model, the calculated results from the modified model agree well with the I_g-V_g measurements atothermal ranging from 295 K to 475 K.