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研究了用溶胶 -凝胶 ( Sol- Gel)法在不同基片和底电极上制备 KTN薄膜的结构 ,发现基片和底电极的结构及化学稳定性直接影响到 KTN薄膜的生成和结构。详细讨论了在 Mg O( 1 0 0 )、Si( 1 0 0 )、Si O2 、Pt/Si、Sn O2( Sb) /Si O2 等基片与底电极上不能制得纯钙钛矿 KTN薄膜的原因 ,对于不与 KTN发生反应的基片 ,当基片的结构、晶格常数等与钙钛矿 KTN越匹配 ,越有利于 KTN的取向生长 ,并在 Sr Ti O3( 1 0 0、1 1 1 )基片上制得纯钙钛矿、高取向甚至外延的 KTN薄膜。
The structure of KTN thin films prepared by sol-gel method on different substrates and bottom electrodes was studied. The results show that the structure and chemical stability of the substrate and bottom electrode directly affect the formation and structure of KTN thin films. It is discussed in detail that pure perovskite KTN films can not be formed on substrates such as MgO (1 0 0), Si (1 0 0), Si O2, Pt / Si, Sn O2 (Sb) The reason for the substrate does not react with KTN, when the substrate structure, lattice constants and other matching with the perovskite KTN, the more conducive to KTN orientation growth, and SrTiO3 (100 1 1) Prepared pure perovskite, high orientation or even epitaxial KTN film on the substrate.