Design of a novel static-triggered power-rail ESD clamp circuit in a 65-nm CMOS process

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This work presents the design of a novel static-triggered power-rail electrostatic discharge(ESD)clamp circuit. The superior transient-noise immunity of the static ESD detection mechanism over the transient one is firstly discussed. Based on the discussion, a novel power-rail ESD clamp circuit utilizing the static ESD detection mechanism is proposed. By skillfully incorporating a thyristor delay stage into the trigger circuit(TC), the proposed circuit achieves the best ESD-conduction behavior while consuming the lowest leakage current(Ileak) at the normal bias voltage among all investigated circuits in this work. In addition, the proposed circuit achieves an excellent false-triggering immunity against fast power-up pulses. All investigated circuits are fabricated in a 65-nm CMOS process. Performance superiorities of the proposed circuit are fully verified by both simulation and test results. Moreover, the proposed circuit offers an efficient on-chip ESD protection scheme considering the worst discharge case in the utilized process. This work presents the design of a novel static-triggered power-rail electrostatic discharge (ESD) clamp circuit. The superior transient-noise immunity of the static ESD detection mechanism over the transient one is referred discussed. Based on the discussion, a novel power By skillfully incorporating a thyristor delay stage into the trigger circuit (TC), the proposed circuit achieves the best ESD-conduction behavior while consuming the lowest leakage current (Ileak) at the normal addition voltage among all investigated circuits in this work. In addition, the proposed circuit achieves an excellent false-triggering immunity against fast power-up pulses. All these circuits were fabricated in a 65-nm CMOS process. are fully verified by both simulation and test results. The proposed circuit offers an efficient on-chip ESD protection scheme considered th e worst discharge case in the utilized process.
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