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The sensitivity and selectivity to H_2 of a new In_2O_3-based gas sensor were improvedsignificantly by surface chemical modification. A dense layer of SiO_2 near the surface of the porousIn_2O_3 bead was formed by chemical vapor deposition(CVD)of diethoxydimethysilane(DEMS).The dense layer functioned as a molecular sieve, thereby the diffusion of gases with large moleculardiameters,except for H_2, was effectively controlled, resulting in a prominent selectivity and highsensitivity for H_2. The working mechanism of the sensor was also presented.
The denseness of SiO 2 near the surface of the porous In 2 O 3 bead was formed by chemical vapor deposition (CVD) of diethoxydimethysilane (DEMS). The dense layer functioned as a molecular sieve, thus the diffusion of gases with large moleculardiameters, except for H_2, was effectively controlled, resulting in a prominent selectivity and high sensitivity for H_2. The working mechanism of the sensor was also presented.