利用氢化物气相外延 (HVPE)生长系统 ,提出并采用在生长区添加额外 HCl的方法改变 Ga N的极化生长方向获得 Ga面极化具有平滑表面的 Ga N生长技术。该法将一定量的 HCl添加到传统 HVPE生长方法中的总氮气流中 ,引入 Ga Cl和 NH3混合生长区 ,通过改变蓝宝石衬底表现的化学反应平衡 ,抑制 N面极化 Ga N的成核 ,获得了粗糙度只有一个纳米左右的具有平滑表面的高质量 Ga极化 Ga N薄膜。由于该方法是在 HVPE装置中“原位”获得了表面光滑的 Ga N,与其他方法相比 ,减少了表面损伤等 Using GaAs HVPE growth system, we propose and adopt the method of adding extra HCl in the growth area to change the polarization growth direction of Ga N to get Ga surface polarization GaN growth technology with smooth surface. The method adds a certain amount of HCl into the total nitrogen flow in a conventional HVPE growth method, introduces a mixed growth region of GaCl and NH3, and suppresses the nucleation of the N-plane polarized GaN by changing the chemical reaction balance exhibited by the sapphire substrate , A high-quality Ga-polarization GaN thin film with a smooth surface with a roughness of only about one nanometer was obtained. Since this method results in a smooth surface GaN “in situ” in the HVPE device, surface damage and the like are reduced as compared with other methods