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实验中使用在蓝宝石衬底上用低压金属有机化学气相沉积(MOCVD)生长的AlGaN基p-i-n结构材料,通过对工艺流程的优化设计,制作了背照射p-i-n型AlGaN日盲紫外探测器,获得了较高的外量子效率。材料中p区和i区的Al组分为40%,n区Al组分为65%。探测器为直径500μm的圆形,光谱响应起止波长为260~310 nm,峰值响应波长283 nm。零偏压下,暗电流密度为2.7×10-10Acm-2,对应的R0A参数为3.8×108Ωcm2,峰值响应率为13 mA/W,对应的峰值探测率为1.97×1012cmHz1/2W-1。其在-7 V偏压下,峰值响应率达到148 mA/W,对应的外量子效率达到63%。
The AlGaN-based pin structure materials grown on low-pressure metal-organic chemical vapor deposition (MOCVD) on sapphire substrates were used in the experiment. The back-illuminated pin-type AlGaN solar-blind UV detectors were fabricated by optimizing the process flow. High external quantum efficiency. The p-type and i-zones in the material have an Al composition of 40% and an n-zone Al composition of 65%. The detector is circular with a diameter of 500 μm. The wavelength of the spectral response is 260 ~ 310 nm and the peak response wavelength is 283 nm. Under zero bias, the dark current density is 2.7 × 10-10Acm-2, the corresponding R0A parameter is 3.8 × 108Ωcm2, the peak response rate is 13 mA / W, and the corresponding peak detection rate is 1.97 × 1012cmHz1 / 2W-1. At -7 V bias, the peak response rate reaches 148 mA / W, corresponding to an external quantum efficiency of 63%.