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为了研究延伸波长In0.83Ga0.17As pin光电二极管的暗电流机制。采用两种不同工艺制备了台面型延伸波长In0.83Ga0.17As pin光电二极管。第一种工艺(M135L-5)是:台面刻蚀后进行快速热退火(RTA)。第二种工艺(M135L-3)是:台面刻蚀前进行快速热退火(RTA)。采用IV测试,周长面积比(P/A),激活能和暗电流成分拟合方法对器件暗电流机制进行分析。结果显示,在220~300 K之间,M135L-3器件暗电流低于M135L-5器件的,并且具有较低表面漏电流。在-0.01~-0.5 V之间和220~270 K之间,M135L-5器件的暗电流主要是扩散电流。在250~300 K之间,M135L-3器件的暗电流主要是扩散电流,而在-0.01~-0.5 V之间和220~240 K之间,其暗电流主要是产生复合电流和表面复合电流。与此同时,暗电流成分拟合结果也得出一致的结论。研究表明,在降低器件暗电流方面,M135L-3器件优于M135L-5器件,这主要是因为快速热退火降低了器件的体电流。
In order to study the dark current mechanism of the extended wavelength In0.83Ga0.17As pin photodiode. Two kinds of different processes were used to fabricate a mesa-type extended-wavelength In0.83Ga0.17As pin photodiode. The first process (M135L-5) is: Rapid Thermal Annealing (RTA) after mesa etching. The second process (M135L-3) is: Rapid Thermal Annealing (RTA) before mesa etching. The dark current mechanism of the device was analyzed by IV test, perimeter area ratio (P / A), activation energy and dark current component fitting method. The results show that the dark current of the M135L-3 device is lower than that of the M135L-5 device between 220 and 300 K, and has a lower surface leakage current. Between -0.01 and -0.5 V and between 220 and 270 K, the dark current in the M135L-5 device is mainly the diffusion current. The dark current of the M135L-3 device is mainly the diffusion current between 250 and 300 K, while between -0.01 and -0.5 V and between 220 and 240 K, the dark current of the M135L-3 device mainly produces the composite current and the surface recombination current . At the same time, the dark current component fitting results also reached the same conclusion. Research shows that the M135L-3 device is superior to the M135L-5 device in reducing the dark current of the device, mainly because rapid thermal annealing reduces the bulk current of the device.