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Ternary In-rich Alx In1-xN films were successfully grown on Si(111) and(0001) sapphire substrates by radio-frequency magnetron sputtering on a relatively Al-rich Alx In1-x N layer after AlN buffer.X-ray diffraction(XRD) patterns of the films indicate highly c axis-oriented wurtzite structure and the indium content of about 0.76 has been evaluated according to the Vegard’s law.An Al-rich Alx In1-xN transition layer was formed between the ultimate In-rich Alx In1-xN film and the AlN buffer,which served as a further buffer to alleviate mismatch.X-ray photoelectron spectroscopy(XPS) depth profiling analyses confirm the alternative of indium and aluminum composition and the unavoidable oxygen impurities from surface to bulk.Owing to high indium content,obvious E 2 Hand InN-like A 1(LO) phonon model accompanying with slight AlN-like A 1(LO) phonon model are observed.Hall effect measurements demonstrate n-type electrical conductivity in these alloys with carrier concentrations n=1019cm-3.The strain in In-rich Alx In1-xN films can be significantly reduced by introducing an Al-rich interlayer,facilitating the improvement of film quality for diverse device applications.
Ternary In-rich AlxIn1-xN films were successfully grown on Si (111) and (0001) sapphire substrates by radio-frequency magnetron sputtering on a relatively pure AlxIn1-xN layer after AlN buffer. X- XRD) patterns of the c-axis orientation of wurtzite structures and the indium content of about 0.76 has been evaluated according to the Vegard’s law. An Al-rich AlxIn1-xN transition layer was formed between the ultimate In-rich AlxIn1 -xN film and the AlN buffer, which served as a further buffer to alleviate mismatch. X-ray photoelectron spectroscopy (XPS) depth profiling analyzes confirm the alternative of indium and aluminum composition and the unavoidable oxygen impurity from surface to bulk. indium content, apparent E 2 Hand InN-like A 1 (LO) phonon model accompanying with slight AlN-like A 1 (LO) phonon models are observed. Height effect measurements demonstrate n-type electrical conductivity in these alloys with carrier concentrations n = 1019cm-3.The strain in In-rich AlxIn1-xN films can significantly reduced by introducing an Al-rich interlayer, facilitating the improvement of film quality for diverse device applications.