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微电子机械系统中关键工艺之一就是刻蚀出高深宽比的图形。本文对掺磷多晶硅反应离子刻蚀（RIE）进行了研究。采用两步刻蚀工艺，SF6，CF4，Cl2CF三种气体组合，从原来45度的各向同性刻蚀提高到73度以上的各向异性刻蚀。射频功率390瓦时，刻蚀速率每分钟200nm。对3．5微米厚的多晶硅，刻蚀时间在20分钟左右，基本上达到要求。
One of the key processes in microelectromechanical systems is the patterning of high aspect ratios. In this paper, phosphorus-doped polysilicon reactive ion etching (RIE) was studied. Using two-step etching process, SF6, CF4, Cl2CF three gas combination, from the original 45 degree isotropic etching increased to more than 73 degrees anisotropic etching. At 390 watts RF power, the etch rate is 200 nm per minute. On the 3.5 micron thick polysilicon, etching time is about 20 minutes, basically meet the requirements.