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本文描述了一种具有台阶电极结构和TiN扩散阻挡层的高可靠微波硅功率晶体管。将这种用于高频大功率器件的结构与传统的平面结构进行了比较讨论。这种新式结构可使微波器件获得更好的性能。由于大功率器件带有梁式引线金属化系统,Au-Si反应及局部铂硅化合物的生长是其主要的失效机理。为了减少上述缺陷,Ti层必须加厚。同时,进一步讨论了TiN在梁式引线金属化系统中的应用,高温长期工作实验结果证明,将台阶式电极结构和TiN 扩散阻挡层应用于大功率微波晶体管可大大提高其可靠性。
This article describes a highly reliable microwave silicon power transistor with a stepped electrode structure and a TiN diffusion barrier. This kind of structure for high-frequency high-power devices is compared with the traditional planar structure. This new structure allows microwave devices to achieve better performance. Due to the high-power devices with beam lead metallization system, the Au-Si reaction and the growth of local platinum-silicon compounds are the main failure mechanisms. In order to reduce the above defects, Ti layer must be thickened. At the same time, the application of TiN in beam lead metallization system is further discussed. The results of long-term working at high temperature show that the application of stepped electrode structure and TiN diffusion barrier in high power microwave transistor greatly enhances its reliability.