实验发现,在硅平面器件硼预沉积时,硼杂质在二氧化硅中的扩散系数远远偏离理论值.为进一步解析这种现象,本文提出了一种硼杂质在二氧化硅中具有双重扩散机构及分层扩散的初步设想.我们认为,利用这一设想,能较好地解析实验结果.实践表明,本实验结果为硅平面器件硼扩散工艺的改革提供了参考依据,并取得了较好的效果. The experimental results show that the diffusion coefficient of boron impurity in silica deviates far from the theoretical value in the pre-deposition of boron on silicon planar devices.In order to further analyze this phenomenon, a new kind of boron impurity with double diffusion in silica Institutions and stratification of the initial idea that we believe that the use of this idea can better resolve the experimental results show that the results of this experiment for the silicon planar devices boron diffusion process to provide a reference for the reform and achieved better Effect.