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设计了一种高低温的高阶曲率补偿带隙基准源。利用VBE的负温度系数特性,分别在高温和低温时使双极型晶体管(BJT)导通,通过BJT的集电极电流产生与温度成指数关系的电压,对基准电压进行补偿,达到高阶补偿的效果。同时,带隙基准电压源采用调节电阻以及NPN和PNP串联的形式,可产生2.3V的基准电压。电路基于CSMC 2μm双极工艺设计,采用Hspice进行仿真验证。仿真结果表明,在-55℃~125℃温度范围内,温度系数达到7.5×10~(-6)/℃。
A high and low temperature high-order curvature compensation bandgap reference is designed. By using the negative temperature coefficient characteristic of VBE, the bipolar transistor (BJT) is turned on at a high temperature and a low temperature, an exponential voltage is generated by the collector current of the BJT, and the reference voltage is compensated to reach a higher order compensation Effect. At the same time, the bandgap reference voltage regulator resistor and NPN and PNP series form, can produce 2.3V reference voltage. Circuit based on CSMC 2μm bipolar process design, using Hspice simulation. The simulation results show that the temperature coefficient reaches 7.5 × 10 -6 / ℃ in the temperature range from -55 ℃ to 125 ℃.