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磁泡是一种新出现的存储技术。目前的存储技术按容量和数据取出时间可分成两大类:一类是磁心和半导体器件;另一类是磁带和磁盘等电子机械式器件。这两大类在容量和数据取出时间上存在的差距,可望用磁泡技术来弥补。磁泡在材料、线路工艺和器件设计方面的改善,使之有希望应用于容量为10~6～10~8位、取出时间小于5毫秒的场合。目前正在研制单片容量为64千位的磁泡芯片。本文首先介绍了磁泡在动态和静态方面的性能并包括对硬泡的讨论。其次描述磁泡器件的工作情况,包括发生、传输、检测和复制,以及具有这些功能的芯片结构。同时也叙述了温度的重要作用及其对泡畴的发生和数据寿命的影响。文中,讨论了大容量存储器模型,给出了其芯片制造技术及整个系统的性能。最后,对磁泡技术的今后发展方向作了一些预测,其中包括磁泡的“自结构传输”和泡点阵外存储器概念。
Bubble is an emerging storage technology. Current storage technologies are divided into two major categories by capacity and data take-out time: one is a core and a semiconductor device; the other is an electromechanical device such as a tape and a disk. These two categories in the capacity and data removal time gap exists, is expected to use bubble technology to make up. Improvements in materials, circuit technology, and device design make the bubble promising for applications where the capacity is 10 to 6 to 10 to 8 bits and the removal time is less than 5 milliseconds. Is currently being developed single-chip capacity of 64 kilobytes of bubble chip. This paper first introduces the dynamic and static properties of the bubble and includes a discussion of the bubble. Second, the operation of the bubble device is described, including generation, transmission, detection and reproduction, as well as the chip structure with these functions. It also describes the important role of temperature and its effect on bubble domain occurrence and data lifetime. In this paper, the mass storage model is discussed, and its chip manufacturing technology and the performance of the whole system are given. Finally, some predictions are made on the future development of bubble technology, including the concept of “self-structure transmission” of bubble and bubble memory outside the lattice.