论文部分内容阅读
本文对低温生长的垂直场ＭＱＷｓ光折变器件电吸收瞬态特性进行了研究，在分析垂直场ＭＱＷｓ器件结构后，我们认为电光层并不单独由多量子阱层构成，而是包括多量子阱层和两边低温生长的缓冲层构成，为此，我们提出了改进的阻容模型，并用这一模型很好地解释ＴＭＱＷｓ光折变
In this paper, we study the electric absorption transient characteristics of vertical field MQWs photorefractive devices grown at low temperature. After analyzing the vertical MQWs device structure, we believe that the electro-optic layer is not composed of multiple quantum well layers alone, but includes multiple quantum wells Layer and low temperature growth on both sides of the buffer layer composition, for which we propose an improved RC model, and use this model to well explain the TMQWs photorefractive