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掩模图形不同区域的波前因衍射光的相干叠加作用而对光刻胶上的场点产生不同的影响。为研究这一作用规律,采用波前分割的方法对掩模图形上的波前进行区域划分,并利用光场相干叠加相互抵消的性质,最终得到了掩模图形上对场点光场影响最大的波前区域。理论分析表明,对于图形内部场点而言,这个区域范围为场点附近约一个半波带的大小;而对靠近图形边缘的场点,其范围与边缘形状有关,一般要稍大于一个半波带。利用该方法可以显著提高仿真效率,对于分析由衍射造成的光刻误差来源和大小具有一定的理论指导意义。该理论计算结果得到了实验验证。
The wave front in different regions of the mask pattern has a different effect on the spot on the photoresist due to the coherent stacking of diffracted light. In order to study the law of this action, the wavefront division method is used to divide the wavefront on the mask pattern and make use of the properties that the coherent interference of the light field cancel each other out. Finally, the influence of the mask pattern on the field light field is maximized Wavefront area. The theoretical analysis shows that for the internal field points of the graph, the range of this region is about a half-wavelength band near the field point. For field points close to the edge of the graph, the range is related to the edge shape, which is generally larger than one half-wave band. The method can significantly improve the simulation efficiency, which has certain theoretical significance for analyzing the source and size of the lithography error caused by diffraction. The theoretical calculation results have been verified by experiments.