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利用离化团束外延(ICBE)技术在GaAs(100)衬底上生长了(100)和(111)两种晶向的CdTe外延层.X光衍射和 RHEED分析结果表明外延层为单晶薄膜,双晶衍射摆动曲线半高宽达630弧秒.本文研究了离化团能量和生长温度对外延层晶向和质量的关系。结果表明,当预热处理温度为480℃,外延取向关系为CdTe(100)//GaAs(100);当预热处理为580℃,外延取向关系为 CdTe(100)+(111)//GaAs(100).离化团束的能量对外延膜的结晶性能起着重要作用.
(100) and (111) CdTe epitaxial layers were grown on GaAs (100) substrates by ion beam epitaxy (ICBE) technique.The results of X-ray diffraction and RHEED show that the epitaxial layers are single crystal thin films , And the half-width of the double-crystal diffraction swing curve is 630 arc seconds.We studied the relationship between the energy and the growth temperature of the epitaxial layer on the orientation and quality of the epitaxial layer. The results show that when the preheating temperature is 480 ℃, the epitaxial orientation relationship is CdTe (100) // GaAs (100). When the preheating temperature is 580 ℃, the epitaxial orientation is CdTe (100) + (111) (100). The energy of ionized clusters plays an important role in the crystallization of epitaxial films.