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报道了一种基于多层六角氮化硼(h-BN)二维薄膜的忆阻器件.该器件不需要电预处理过程,且具有自限流的双极性阻变行为;具有较好的抗疲劳性和较长的数据保持时间.该器件在脉冲编程条件下具有模拟转变特性,即在连续的电压脉冲下器件的电阻态能被连续地调控,使得该器件能够模仿神经网络系统中的神经突触权重变化行为.综上所述,基于多层h-BN的忆阻器具有应用在非易失性存储和神经计算中的潜力.
A memristive device based on two-dimensional multi-layer hexagonal boron nitride (h-BN) thin films is reported. The device does not require electric pretreatment and has a self-limiting bipolar resistive behavior. Fatigue resistance and long data retention time.The device has the characteristics of analog transition under pulse programming conditions that the device’s resistive state can be continuously regulated under continuous voltage pulses so that the device can emulate the neural network system Neuronal Synaptic Weight Change Behavior In summary, memristors based on multilayer h-BN have the potential to be used in non-volatile storage and neural computing.