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考虑了同制造一定类型的场效应晶体管有关的扩散方程的若干解,并且用图表给出了结果。首先,对于杂质的恒定阶跃函数源考虑了二维解,同时为了进行横向扩散的设计计算,以方便的形式给出了计算的结果。然后讨论自无限源扩散的若干情况,即阶跃函数源通过一个窄掩蔽窗口的扩散,在氧化物的窄条下面的扩散,在小的掩膜下面自小的瞬时源和自瞬时源阶跃函数的扩散。讨论了对两阶扩散过程扩展这个工作的困难。
Several solutions to the diffusion equation related to the fabrication of a certain type of field-effect transistor are considered and the results are given graphically. First, a two-dimensional solution is considered for a constant step function source of impurities, and the calculation results are given in a convenient form for the design calculation of lateral diffusion. Then we discuss several cases of diffusion from an infinite source, namely diffusion of the step function source through a narrow masking window, diffusion below the narrow strip of oxide, small instantaneous source under a small mask, and self-transient source step The proliferation of functions. Discussed the difficulty of extending this work to the second-order diffusion process.