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设计了电流模式曲率补偿的CMOS带隙基准源,基本原理是利用两个偏置在不同电流特性下的三极管,得到关于温度的非线性电流,补偿VEB的高阶温度项。用标准的0.6μm CMOS BSIM3v3模型库对该带隙基准源进行了仿真,结果表明在±1.5 V的电源电压下,输出基准电压为-1.418 55 V,-55～125℃较宽的温度范围内,输出电压的变化只有0.35 mV,有效温度系数达到1.37×10-6/℃。同时,带隙基准源具有较高的电源抑制比,在2 kHz下达到73 dB。
The current mode curvature compensation CMOS bandgap reference is designed. The basic principle is to use the two transistors biased at different current characteristics to obtain the nonlinear current with respect to the temperature and compensate the high-order temperature term of VEB. The bandgap reference was simulated with a standard 0.6μm CMOS BSIM3v3 model library. The results show that the output reference voltage is -1.41855 V at a supply voltage of ± 1.5 V and within a wide temperature range of -55 to 125 ° C , The change of output voltage is only 0.35 mV, the effective temperature coefficient reaches 1.37 × 10-6 / ℃. At the same time, the bandgap reference has a high power supply rejection ratio of 73 dB at 2 kHz.