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对一种基于生长在半绝缘InP衬底上InGaAs外延材料的新型太赫兹室温探测器进行研究。首先在HFSS理论计算的基础上对器件天线阻抗、驻波比、辐射方向图等特性参数进行分析。其次,通过光刻、腐蚀、溅射、点焊等工艺制作出对称金属电极天线耦合的太赫兹探测器件。结合自己搭建的0.037 5 THz器件响应测试系统,得到铟镓砷太赫兹探测器件在不同偏置电流和不同调制频率下的器件响应曲线。结果表明器件具有明显的光电信号和快的响应速度。通过利用高莱探测器进行标定,得到器件在0.0375THz时的电压灵敏度优于6V/W,器件噪声等效功率NEP优于1.6×10-9W/Hz1/2,器件响应时间优于300μs。
A new terahertz room temperature detector based on InGaAs epitaxial materials grown on semi-insulating InP substrates was investigated. First, based on the HFSS theoretical calculation, the antenna impedance, VSWR, radiation pattern and other characteristic parameters are analyzed. Secondly, through the lithography, etching, sputtering, spot welding and other processes to produce a symmetrical metal electrode antenna coupling terahertz detection device. Combined with the self-built 0.037 5 THz device response test system, the device response curves of the indium gallium arsenide terahertz detector at different bias currents and different modulation frequencies are obtained. The results show that the device has obvious optical signals and fast response speed. The voltage sensitivity of the device is better than 6V / W at 0.0375THz and the equivalent NEP of device noise is better than 1.6 × 10-9W / Hz1 / 2. The response time of the device is better than 300μs.