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为适应大容量高速红外光纤通讯的需要,InP/GaInAs p—i—n光电二极管是可以满足各种需要的器件之一,为要提高响应速度,降低因器件结构而带来的寄生电容是一个关键问题,台面背照射结构的p—i—n低电容光电二极管过去已见一些报导,但这种结构对于集成化光电器件在可靠性和兼容性方面都有一些问题。为了克服这些问题同时实现低电容,日本富士通研究室的科学家,考虑到在半绝缘衬底上形成焊接区,并巧妙地实行跨接,可以将寄生电容减至最小,因而采用平面掩埋结构,制成了响应速度高达10GHz的InP/GaInAs p—i—n光电二极管。
In order to meet the needs of large-capacity and high-speed infrared optical communications, InP / GaInAs p-i-n photodiodes are one of the devices that can meet various needs. In order to improve the response speed and reduce the parasitic capacitance caused by the device structure, The key issue of p-i-n low-capacitance photodiodes with mesa back-illuminated structures has been reported in the past, but such a structure has some problems with the reliability and compatibility of integrated optoelectronic devices. In order to overcome these problems and achieve low capacitance at the same time, Fujitsu Laboratories scientists in Japan, taking into account the semi-insulating substrate formed on the welding area, and cleverly implemented cross-connect, parasitic capacitance can be minimized, so the use of planar buried structure, the system Became the InP / GaInAs p-i-n photodiode with a response speed of up to 10 GHz.