三菱电机公司使用2微米规范NMOS技术开发出了256kEPROM,现已开始出售样品。 EPROM是一种能够进行电写入并用紫外线照射而能擦除的非易消性存储器,尽管当初这种存储器作为程序调整用而被开发出来,但是,随着可靠性的不断提高,由于这种存储器具有比固定掩摸存储器在程序调试上简单这一优点,因而它在微机应用中得到了广泛地采用。 Mitsubishi Electric Corporation developed the 256k EPROM using a 2-micron norm NMOS technology and has now begun selling the sample. EPROM is a non-erasable memory that can be electrically written and erased by UV irradiation. Although such a memory was originally developed for program adjustment, as reliability has been increasing, Memory has the advantage of being simpler in program debugging than fixed mask memory, so it has been widely adopted in microcomputer applications.