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依据垂直双扩散场效应晶体管(VDMOSFET)的结构设计及参数要求,使用新一代Sentaurus系列TCAD工具对分立器件VDMOSFET进行分析。通过此工具可以对VDMOSFET的工艺结构级和半导体器件物理特性级进行可制造性设计及验证。本工作重点分析了能够影响功率VDMOSFET导通电阻、阈值电压等各种因素及其之间的关系,对沟道区、p+区和n+源区掺杂浓度,以及注入后的退火温度和时间等工艺参数进行优化设置。结果表明,通过使用Sentaurus系列TCAD工具对VDMOSFET器件进行模拟与分析所得出的参数能够达到IR公司的IRF140的设计水平。
Based on the structure design and parameter requirements of vertical double diffused field effect transistor (VDMOSFET), a new generation of Sentaurus family of TCAD tools is used to analyze discrete device VDMOSFET. With this tool, manufacturability design and verification of the VDMOSFET’s process architecture and semiconductor device physical characteristics can be performed. This work focuses on various factors that affect the on-resistance of VDMOSFET, threshold voltage and other factors and the relationship between them, the doping concentration of channel region, p + region and n + source region, as well as the annealing temperature and time after injection Process parameters to optimize settings. The results show that the parameters obtained from the simulation and analysis of VDMOSFET devices using the Sentaurus family of TCAD tools meet the design requirements of IR’s IRF140.