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随着栅氧化层厚度的不断减小,硼穿通问题变得越来越严重。特别是在表面沟道器件中,非常容易出现硼穿通现象。为了减小P型多晶硅栅电极中硼穿通的影响,需要明确多晶硅栅电极中硼穿通与栅氧化层厚度之间的关系。提出的双栅PMOSFET模型将P型多晶硅栅极与N型多晶硅栅极的功函数之差与阈值电压差值进行对比,完成了硼穿通的判定。通过优化热氧化条件,采用N2O热处理,能够有效改善薄栅氧化层PMOSFET中的硼穿通问题。
As gate oxide thickness continues to decrease, boron penetration problems become more serious. Especially in surface channel devices, boron penetration is very prone to occur. In order to reduce the influence of boron punch-through in a P-type polysilicon gate electrode, it is necessary to clarify the relationship between the boron punch-through in the polysilicon gate electrode and the gate oxide thickness. The proposed dual-gate PMOSFET model compares the difference between the work function of the P-type polysilicon gate and the N-type polysilicon gate with the threshold voltage difference to complete the determination of boron punch-through. By optimizing the thermal oxidation conditions and using N2O heat treatment, the boron penetration problem in the thin gate oxide PMOSFET can be effectively improved.