论文部分内容阅读
解析地研究了一种改进的平凸波导结构并成功地应用于1.5～1.6μm波长范围的InGaAsP/InP激光器以实现稳定的横模工作。这些激光器的结构特点是有源层与上包层之间有一标准缓冲层,而有源层与衬底之间具有一厚度不同的波导层。这种结构的理论分析表明:在一定沟道深度下,增加缓冲层的厚度会使基横模工作所允许的衬底沟道最大宽度变得更大。分析结果还证明当缓冲层厚度从0.1μm增至0.3μm时,有源层中的光学限制因子会有所减小。用液相外延制作了具有缓冲层和平凸波导的1.5μm激光器。这些激光器直到I=2I_(th)还是基横模工作。直流阈值电流为100～300mA单面微分量子效率为10～15％。25℃下,实现了2000小时的长时间连续波工作。
An improved planoconvex waveguide structure is investigated analytically and successfully applied to InGaAsP / InP lasers in the 1.5-1.6 μm wavelength range for stable transverse mode operation. The structure of these lasers is characterized by a standard buffer layer between the active layer and the over clad layer and a waveguide layer with a different thickness between the active layer and the substrate. The theoretical analysis of this structure shows that increasing the thickness of the buffer layer at a certain channel depth will make the maximum channel width of the substrate allowed by the basic transverse mode operation larger. The results of the analysis also show that the optical confinement factor in the active layer is reduced when the thickness of the buffer layer is increased from 0.1 μm to 0.3 μm. A 1.5μm laser with a buffer layer and a plano-convex waveguide was fabricated by liquid-phase epitaxy. These lasers until I = 2I_ (th) or basic transverse mode of operation. DC threshold current 100 ~ 300mA single-sided differential quantum efficiency of 10 to 15%. 25 ℃, to achieve a long time of 2,000 hours of continuous work.