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采用相同的欧姆接触,栅长为100 nm的T型栅以及50 nm的氮化硅(Si N)表面钝化等器件工艺,制备了漏源间距分别为2和3μm的AlGaN/Ga N高电子迁移率场效应晶体管(HEMT)。研究发现,当漏源间距从2μm增加至3μm后,器件的直流特性略有下降,如在Vgs为1 V下的饱和电流密度从1.4 A/mm下降至1.3 A/mm。此外,器件的射频特性也略有下降,电流增益截止频率(fT)从121 GHz降至116 GHz,最大振荡频率(fmax)从201 GHz下降至189 GHz。然而,器件的击穿特性却有显著提升,击穿电压从44 V提升至87 V。在实际器件设计制备过程中可考虑适当增加漏源间距,在保持直流和射频特性的前提下,提升器件的击穿特性。
Using the same ohmic contact, a T-gate with a gate length of 100 nm, and a passivation of 50 nm of silicon nitride (Si N), the AlGaN / Ga N electron with drain spacing of 2 and 3 μm Mobility Field Effect Transistor (HEMT). The study found that when the drain-source spacing increases from 2μm to 3μm, the DC characteristics of the device decrease slightly, for example, the saturation current density at 1 V Vgs drops from 1.4 A / mm to 1.3 A / mm. In addition, the RF characteristics of the device are also slightly reduced, the current gain cut-off frequency (fT) from 121 GHz to 116 GHz, the maximum oscillation frequency (fmax) from 201 GHz to 189 GHz. However, the breakdown characteristics of the device are significantly improved, the breakdown voltage increased from 44 V to 87 V. In the actual device design and preparation process can be considered to properly increase the drain-source spacing, while maintaining the DC and radio frequency characteristics of the premise, to enhance the device’s breakdown characteristics.