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电沉积制备的CdSe薄膜经不同温度退火之后由光电化学测定和x射线衍射实验进行表征,发现随着退火温度的上升,CdSe电极的光电转换效率提高,半导体薄膜中掺杂浓度略有减小,而少子扩散长度明显增大、薄膜中的CdSe微晶呈一定择优取向的六方纤锌矿晶体桔构,且含少量六方晶型的Se,在440℃以下退火时CdSe晶型没有改变,但退火温度升高使其晶粒尺寸增大,同时Se的含量减少,讨论了薄膜光电性能与结晶学性质的关系。
CdSe thin films prepared by electrodeposition were characterized by photoelectrochemical measurements and X-ray diffraction after annealed at different temperatures. It was found that with the increase of annealing temperature, the photoelectric conversion efficiency of CdSe electrode increased slightly and the doping concentration of semiconductor thin films decreased slightly. However, the diffusion length of minority carriers is obviously increased. The CdSe crystallites in the films show a preferential orientation of hexagonal wurtzite crystal orange structure, and contain a small amount of hexagonal Se. The CdSe crystal form does not change when annealed below 440 ℃. However, With the increase of temperature, the grain size increases and the content of Se decreases. The relationship between the photoelectric properties and crystallographic properties of films is discussed.