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本文用共焦显微拉曼系统原位观察了Ｓｉ（１００）表面氢终端原子在稀氢氟酸中的变化过程。研究表明：在硅片浸入氢氟酸溶液的初期，表面主要被硅和三个氢原子的结合体（ＳｉＨ３）以及硅和两个氢原子的结合体（ＳｉＨ２）所覆盖。随着腐蚀过程的延长，ＳｉＨ３越来越少，ＳｉＨ２的信号不断增强，并且，硅和单个氢原子的结合体（ＳｉＨ）的信号也开始出现。最终，硅表面主要被ＳｉＨ２所覆盖，有少量ＳｉＨ３和ＳｉＨ键。本文还表明，拉曼光谱用来原位观察半导体材料表面终端原子键在溶液中的变化是很有用的工具
In this paper, the confocal microscopic Raman system was used to observe the change of hydrogen terminal atoms on Si (100) surface in dilute hydrofluoric acid. The results show that the surface of the silicon wafer is mainly covered by the combination of silicon and three hydrogen atoms (Si-H3) and the combination of silicon and two hydrogen atoms (Si-H2) during the initial immersion of the silicon hydrofluoric acid solution. With the extension of the corrosion process, fewer and fewer Si H3, Si H2 signal continues to increase, and the combination of silicon and a single hydrogen atoms (Si H) signal also began to appear. Eventually, the silicon surface is mainly covered by Si-H2, with a small amount of Si-H3 and Si-H bonds. This article also shows that Raman spectroscopy is a useful tool for in situ observation of changes in the terminal atomic bonds of a semiconductor material surface in solution