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由材料参数测试和器件响应率测试证实,LiNbO_3晶体的热释电响应率优值Mv为一般公认值的二倍。而且当温度升高时,Mv缓慢降低,并不出现某些文献所预示的明显增加。着重研究了LiNbO_3探测器在高功率密度连续激光辐照下的输出特性。研究结果表明,在相同条件下,LiNbO_3探测器的输出开始偏离线性所对应的最大功率密度远高于LiTaO_3。仔细测定了LiNbO_3晶体的固有介质损耗,并据此估计LiNbO_3器件探测率的极限值。分析表明,就制备背景限探测率的器件的潜力而言,LiNbO_3不低于TGS。
It is confirmed by material parameter test and device response rate test that the pyroelectric response rate of LiNbO_3 crystal is twice as good as Mv. And as the temperature rises, Mv slowly decreases without significant increases predicted by some of the literature. The output characteristics of LiNbO_3 detector under high power density continuous laser irradiation are studied emphatically. The results show that under the same conditions, the maximum power density of the LiNbO_3 detector which starts to deviate from the linearity is much higher than that of LiTaO_3. The intrinsic dielectric loss of LiNbO_3 crystal was carefully measured, and the limit value of LiNbO_3 device detection rate was estimated accordingly. Analysis shows that LiNbO_3 is not lower than TGS in terms of the potential for devices with background detection probabilities.