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介绍了二类不同结构的(表面和侧面发射型)红外发光二极管。研究和分析了它们在低频大电流脉冲注入下的Pp—Ip特性和直流注入下的光谱特性。结果表明:正常情况下,器件具有线性的Pp—Ip特性,直流注入下的发射光谱具有高斯分布形状,对于Burrus表面发射型器件,在0—3A的峰值脉冲电流注入下,部分器件具有的异常Pp—Ip特性:线性-亚线性-超线性区。在20—100mA的直流电流注入下,部分器件的发射光谱具有多峰状。
Two types of differently structured (surface and side-emitting) infrared light-emitting diodes are introduced. Their Pp-Ip characteristics under low-frequency and high-current impulse injection and their spectral characteristics under DC injection were studied and analyzed. The results show that under normal conditions, the device has a linear Pp-Ip characteristic and the emission spectrum under DC injection has a Gaussian distribution. For Burrus surface-emitting devices, some devices have abnormalities under the peak pulse current injection of 0-3A Pp-Ip Characteristics: Linear - Sublinear - Superlinear. Under the injection of 20-100mA DC current, the emission spectrum of some devices has a multimodal shape.