论文部分内容阅读
栅电荷是用于衡量功率MOSFET开关性能的重要参数,通常采用在栅极输入电流阶跃信号的方法来测量。一种新型的栅电荷测试电路被提出,该测试电路使控制信号从MOSFET的源极输入,从而消除了控制信号对栅极输入电流的影响。因为输入电流太小不能直接测量,测试时采用测量电压阶跃信号的方法来衡量电流阶跃信号的性能。与以往的测试电路对比结果表明,该电路可以使MOSFET栅极输入的电流更接近于理想的电流阶跃信号,该信号上升时间小于100 ns,并且上升后稳定,因此提高了栅电荷测量的准确度。
Gate charge is used to measure the performance of the power MOSFET switching an important parameter, usually used in the gate input current step signal to measure. A novel gate charge test circuit has been proposed that allows the control signal to be input from the MOSFET’s source, thereby eliminating the effect of the control signal on the gate input current. Because the input current is too small can not be measured directly, the measurement method used to measure the voltage step signal to measure the current step signal performance. Compared with the previous test circuit, this circuit can make the MOSFET gate input current closer to the ideal current step signal. The rise time of the signal is less than 100 ns and rises steadily, thus improving the accuracy of the gate charge measurement degree.