论文部分内容阅读
采用自制的低压金属有机化学气相淀积设备,用三甲基镓、三甲基铟作为Ⅲ族源,三甲基锑和砷烷作为V族源在(100)面GaSb和GaAs单晶衬底上分别外延生长了InAsSb材料.用X射线双晶衍射、原子力显微镜、扫描电镜和电子探针能谱仪等对材料特性进行了表征,研究了生长温度、Ⅴ/Ⅲ比、过渡层等生长参数对外延层质量的影响.获得了与GaSb衬底晶格失配度为0.4%的表面光亮且晶体质量较好的InAs0.85Sb0.15外延层.
A homemade low-pressure metal-organic chemical vapor deposition apparatus was used, in which trimethylgallium, trimethylindium as a group III source, trimethyl antimony and arsine were used as a group V source on a (100) plane GaSb and GaAs single crystal substrate The InAsSb materials were epitaxially grown respectively.The material properties were characterized by X-ray double crystal diffraction, atomic force microscopy, scanning electron microscopy and electron probe spectroscopy, and the growth parameters such as growth temperature, Ⅴ / Ⅲ ratio, transition layer and other growth parameters On the quality of the epitaxial layer.The InAs0.85Sb0.15 epitaxial layer with a bright surface and good crystal quality with a lattice mismatch of 0.4% with GaSb substrate was obtained.