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研究了离子能量在薄膜制备过程中对TiO2和SiO2薄膜应力的影响。用电子束蒸发的方法制备TiO2和SiO2薄膜,使用实验室自行设计制作的基于哈特曼传感器的薄膜应力仪在线监测TiO2和SiO2薄膜应力随膜厚的变化。结果表明,离子辅助沉积的TiO2薄膜张应力值要比传统工艺低40 MPa,并且随着离子能量的增加,薄膜逐渐由张应力变为压应力,薄膜的最大折射率为2.56;而离子辅助的溅射效应在制备SiO2薄膜时比较明显,传统工艺制备的SiO2薄膜表现为压应力,而用离子辅助的方法制备的SiO2薄膜表现为张应力,并且随着离子能量的增加,薄膜变得疏松,折射率逐渐降低。
The effect of ion energy on the stress of TiO2 and SiO2 films during the preparation of the films was investigated. The TiO2 and SiO2 thin films were prepared by electron beam evaporation. The stress of TiO2 and SiO2 thin films was monitored online by using the film stress meter based on Hartmann sensor designed by laboratory. The results show that the tensile stress of TiO2 film deposited by ion-assisted deposition is 40 MPa lower than that of the conventional process, and the film gradually changes from tensile stress to compressive stress with the increase of ion energy. The maximum refractive index of the film is 2.56. The sputtering effect is more obvious in the preparation of SiO2 thin films. The SiO2 thin films prepared by the traditional process show compressive stress, while the SiO2 thin films prepared by the ion-assisted method exhibit tensile stress. With the increase of ion energy, the thin films become loose, The refractive index gradually decreases.