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为了选择带隙对固定激光线调谐的可能性,借助于Ga_(1-x)A1_xAs的禁带宽度随组分x和温度的变化,测量了Ga_(1-x)A1_xAs晶体的一级和二级共振喇曼散射。用线性化丸盒轨道方法(LMTO方法)计算单声子光学畸变势d_0,从共振喇曼散射的测量得到双声子2LO_2和LO_1+LO_2的光学畸变势D_1。
In order to choose the possibility of tuning the band gap for a fixed laser line, the first and second photons of Ga_ (1-x) A1_xAs were measured with the aid of the bandgap of Ga_ (1-x) Resonance Raman scattering. The optical distortion potential D_1 of the two phonons 2LO_2 and LO_1 + LO_2 was obtained from the resonance Raman scattering measurement using the linearized orbit-orbit method (LMTO method).