论文部分内容阅读
作为对GaN器件快速发展和商业化兴趣日益增浓的响应，1997年秋季在波士顿举行的材料研究协会GaN会议和相关材料专题讨论会的特点是首次讨论了氧化缘（GaN）二极管激光器的工业应用。日本东京日亚化学工业公司的S．Nakamura将开办一个讲习班，评述他的研究组在开创GaN激光器方面
In response to the growing interest and growing commercial interest in GaN devices, the Materials Research Association’s GaN Conference and Related Materials Symposium, held in Boston in Fall 1997, featured the first discussion of the industrial applications of oxide diode (GaN) diode lasers . Japan’s Nichia Chemical Industry Co., Ltd. Nakamura will start a workshop to comment on his group’s work in creating GaN lasers