Efficient carrier transport via dual-function interfacial engineering using cesium iodide for high-p

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As a famous hole transporting material,nickle oxide (NiOx) has drawn enormous attention due to its low cost and superior stability.However,the relatively low conductivity and high-density surface trap states of NiOx severely limit device performance in solar cell applications.Interfacial engineering is an efficient approach to achieve remarkable hole-transporting performance by surface passivation.Herein,the efficient NiOx hole transport layer was prepared by surface passivation engineering strategy via facile solution processes with cesium iodide (Csl).It is demonstrated that Csl plays a super-effective dual-function role in inverted solar cell device:On one hand,the presence of Csl hugely passivates the surface trap states at the NiOx/perovskite interface along with obviously improved conductivity by the incorporated Cs+;on the other hand,the ions immigration is significantly suppressed by the presence of I ion for high-quality perovskite films,resulting in a stable contact interface.The ameliorative interface leads to largely reduced carrier non-radiative recombination,attributing to boosted carrier extraction efficiency.As a result,decent power conversion efficiency (PCE) of 18.48% with a noticeable fill factor (FF) beyond 80% was achieved.This facile and efficient surface engineering approach with dual-function shows excellent potential for the design of high-performance functional interfacial modification layer to achieve high-performance solar cells.
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