合成了掺氟汞基铜酸盐超导体 .研究证明氟进入了 1 2 2 3相 ,占据元胞中O( 3)的晶格位置 .掺氟烧结而不退火样品的超导临界温度Tc 为 1 33.8K ,比不掺氟烧结标准样品的Tc 提高约 2 2K ,显示氟掺杂能够使样品中载流子浓度nh 不经退火一步接近最佳值 .F代O( 3)收缩了CuO2 面与电荷储存层间距离及氟的电负性比氧大是提高Tc 的主要原因 . The fluorine-doped Hg-based cuprate superconductor was synthesized, and the results show that fluorine enters the 1223 phase and occupies the lattice position of O (3) in the cell. The superconducting critical temperature Tc of the sample doped with fluorine and not annealed is 1 33.8K, which is about 2 2K higher than that of the non-doped sintered samples, indicating that fluorine doping can make the carrier concentration nh near the optimal value without anneal for one time .F generation O (3) The distance between charge storage layers and the electronegativity of fluorine are the main reasons for increasing Tc.