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本文利用迁移率谱分析了离子束刻蚀后的碲镉汞晶体,发现180μm的p型碲镉汞晶体在刻蚀后完全转为n型,且由两个不同电学特性的电子层组成:低迁移率的表面电子层和高迁移率的体电子层.通过分析不同温度下的迁移率谱,表明表面电子层的迁移率不随温度而变化,而体电子层的迁移率随温度的变化与传统的n型碲镉汞材料一致.不同厚度下的霍尔参数表明体电子层的电学性质均匀.另外,通过计算得到表面电子层的浓度要比体电子层高2—3个数量级.
In this paper, we analyzed the HgCdTe crystal after ion beam etching by using the mobility spectrum and found that the 180μm P-type HgCdTe crystal completely changed into n-type after etching and consisted of two electronic layers with different electrical characteristics: low Mobility of the surface electron layer and the high mobility of the body electron layer by analyzing the mobility at different temperatures spectrum shows that the surface electron mobility does not change with the temperature of the body electron mobility and temperature changes with the traditional Of the n-type HgCdTe materials.Hall parameters under different thicknesses show that the electrical properties of the bulk electronic layer are uniform.In addition, the concentration of the surface electronic layer is 2-3 orders of magnitude higher than that of the bulk electronic layer.