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介绍了一种Ku波段GaAs功率放大器芯片的研制过程。芯片采用电抗匹配电路结构,三级级联放大,末级采用多胞器件进行功率合成,实现了电路的高增益和所要求的功率输出;另外,还对元器件模型技术、GaAsMM IC测试技术等进行了相应描述。在芯片的研制过程中,利用ADS软件进行仿真及优化,利用电磁场仿真进行版图设计。在4英寸(100 mm)0.25μmGaAs PHEMT工艺线上完成芯片制作,在12.5～15.0 GHz的频率范围内,脉冲饱和输出功率Po大于34.7 dBm(脉宽100μs,占空比10%),功率增益Gp大于19.7 dB,功率附加效率PAE大于30%,功率增益平坦度小于±0.4 dB。该芯片可以应用到许多微波系统中。
The development of a Ku-band GaAs power amplifier chip is introduced. Chip using impedance matching circuit structure, the three cascade amplification, the last stage using multi-cell devices for power synthesis, to achieve high-gain circuit and the required power output; In addition, the component model technology, GaAsMM IC testing techniques The corresponding description is made. In the chip development process, the use of ADS software simulation and optimization, the use of electromagnetic field simulation layout design. The chip fabrication was completed on a 4-inch (100 mm) 0.25μm GaAs PHEMT process line. The pulse saturation output power Po was greater than 34.7 dBm (pulse width 100μs, duty cycle 10%) in the frequency range of 12.5-15.0 GHz, and the power gain Gp Greater than 19.7 dB, the power added efficiency PAE is greater than 30% and the power gain flatness is less than ± 0.4 dB. The chip can be applied to many microwave systems.