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我们用变分方法研究了外电场下量子阱中的杂质态结合能,计算中既考虑了电子同体纵光学声子和界面光学声子的相互作用又考虑了杂质中心同体纵光学声子和界面光学声子的相互作用。我们以GaAs/Al0.3Ga0.7As量子阱为例,讨论了结合能随杂质位置、阱宽和电场强度的变化规律。得到了电子-声子相互作用对杂质态结合能和斯塔克效应的修正是相当明显的。
We use the variational method to study the impurity state binding energy in the quantum well under an external electric field. The calculation takes into account not only the interaction between the longitudinal optical phonons and the interfacial optical phonons of the electron but also the longitudinal optical phonons and interfaces Optical phonon interaction. Taking the GaAs / Al0.3Ga0.7As quantum well as an example, we discuss the variation of the binding energy along with the impurity position, well width and electric field strength. It is quite obvious that the correction of the binding energies of the impurity states and the Stark effect by the electron-phonon interaction is obtained.