美国Cree公司宣布推出商用GaN MMIC放大器。这两款MMIC集成了Cree公司的GaN RF晶体管和各种其它的电路元件,构成全集成放大器电路,从而比混合放大器的体积小、性能高。许多RF集成电路目前可制作在一块SiC衬底上,制造工艺与商用微处理器的相同。上述新款宽带功率放大器MMIC(型号 United States Cree announced the commercial launch of GaN MMIC amplifier. Both MMICs integrate Cree’s GaN RF transistors and a variety of other circuit components to form a fully integrated amplifier circuit that is smaller and more powerful than a hybrid amplifier. Many RF integrated circuits are currently fabricated on a SiC substrate with the same manufacturing process as commercial microprocessors. The new broadband power amplifier MMIC (model