一、引言1970年美国通用电器公司(G.E.)首次报导用“晶种法”(或称“温差法”)生长出1克拉(5毫米)的宝石级金刚石。1977年以后相继公开了一些专利。1979年日本科学技术厅无机材质研究所报导用温差法生长出3毫米的优质金刚石单晶。我们于1979年起开展了类似的工作,参照G.E.公司的方法,获得了1～1.5毫米质量较好的金刚石单晶。关于用晶种法生 I. INTRODUCTION In 1970, G.E. first reported that 1 carat (5 mm) gem grade diamond was grown using the “seed method” (or “temperature difference method”). After 1977, some patents have been published. 1979 Institute of Inorganic Materials, Japan Science and Technology Agency reported the use of temperature difference method to grow 3 mm high-quality diamond single crystal. We started a similar work in 1979, according to the G.E. company’s method, obtained 1 to 1.5 mm better quality diamond single crystal. On the use of seed law students