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本文对G.A.Lang等关于功率晶体管热疲劳失效研究的理论模型提出了商榷意见,并给出了其补正形式和解析解。这一结果也适用于其他具有多层结构的电子器件。
In this paper, we discuss the theoretical model of thermal fatigue failure of power transistor proposed by G.A.Lang et al., And give its correction form and analytical solution. This result also applies to other electronic devices with a multilayer structure.