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采用离子束辅助固相外延技术,在Ge基片上制备了SiGe/Ge异质结。利用高分辨透射电镜(HRTEM)、能量散射谱(EDX)、喇曼散射谱对SiGe/Ge异质结的形貌、成分和结构等物理性质进行了表征。还利用上述分析手段研究了固相外延温度对SiGe/Ge异质结中SiGe外延层生长的影响。结果表明,低能条件下(30keV)离子注入有利于形成SiGe外延层;通过对SiGe外延层高分辨晶格像的傅立叶分析得出,900℃下进行固相外延能够有效抑制SiGe外延层中点缺陷的生成;而且利用该技术外延生长的SiGe层完全弛豫。
SiGe / Ge heterojunction was prepared on Ge substrate by using ion beam assisted solid phase epitaxy. The physical properties of SiGe / Ge heterojunction such as morphology, composition and structure were characterized by high resolution transmission electron microscopy (HRTEM), energy dispersive spectroscopy (EDX) and Raman scattering. The above analysis was also used to study the effect of solid-state epitaxy on the growth of SiGe epitaxial layers in SiGe / Ge heterojunction. The results show that the SiGe epitaxial layer is conducive to the formation of SiGe epitaxial layer under the condition of low energy (30keV) ion implantation. By Fourier analysis of the high resolution lattice image of SiGe epitaxial layer, the solid state epitaxy at 900 ℃ can effectively suppress the defects of SiGe epitaxial layer The SiGe layer epitaxially grown by this technique is completely relaxed.