论文部分内容阅读
对电场作用下Si C与Ti扩散连接接头界面结构及力学性能进行了分析测试。研究发现,当金属、陶瓷分别连接电场正、负极时,电场可促进界面扩散反应层厚度增加,而电压极性相反时,促进作用明显减弱;连接界面发生原子扩散及化学反应,生成相主要为:Ti_5Si_3与Ti C,从Si C侧到Ti侧界面相结构依次为Si C/Ti C/(Ti_5Si_3+Ti C)/Ti;性能测试结果表明,1000℃/2 h/7.5 MPa下获得的接头剪切强度为66.4 MPa,950℃/1.5 h/7.5 MPa/400 V电场作用下扩散连接接头剪切强度为69.6 MPa,即在其他连接工艺参数相同情况下,施加电压可以增大剪切强度,提高连接效率。
The interface structure and mechanical properties of Si C and Ti diffusion bonded joints under electric field were analyzed and tested. The results show that when the metal and the ceramic are connected to the positive and negative electric field, respectively, the electric field can promote the increase of the thickness of the interface diffusion reaction layer, while the promotion of the voltage polarity is obviously weakened. At the interface, atom diffusion and chemical reaction occur, : Ti_5Si_3 and TiC, and the phase structures from Si C side to Ti side are Si C / Ti C / (Ti_5Si_3 + Ti C) / Ti, respectively. The results of the performance test show that the joints obtained at 1000 ℃ / 2 h / 7.5 MPa Shear strength of 66.4 MPa, 950 ℃ / 1.5 h / 7.5 MPa / 400 V electric field diffusion joint shear strength of 69.6 MPa, that is, under the same conditions of other connection process parameters, the applied voltage can increase the shear strength, Improve connection efficiency.